Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

A divergent microstructure was fabricated by CMOS compatible processes on the central region of a Ge p i-n photodetector to enhance the residual tensile strain. Tunable biaxial tensile strain of ~0.22-1.01% was achieved by varying the geometrical factors, and it was confirmed by Raman measurements a...

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Bibliographic Details
Main Authors: Wu, Shaoteng, Zhou, Hao, Chen, Qimiao, Zhang, Lin, Lee, Kwang Hong, Bao, Shuyu, Fan, Weijun, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Germanium
Photodetector
Online Access:https://hdl.handle.net/10356/153161

Internet

https://hdl.handle.net/10356/153161

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