Electrodeposition of indium tin oxide thin film
A new method for producing indium tin oxide (ITO) thin film by electrodeposition of indium chloride and tin chloride precursors has been achieved in this project. The films were annealed at 500°C for 1h to remove the excess metallic elements to form crystalline ITO thin films. XRD analysis showed ty...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/15383 |
| Summary: | A new method for producing indium tin oxide (ITO) thin film by electrodeposition of indium chloride and tin chloride precursors has been achieved in this project. The films were annealed at 500°C for 1h to remove the excess metallic elements to form crystalline ITO thin films. XRD analysis showed typical patterns of rhombohedra and cubic indium oxide (In2O3) structure for the ITO film formed. This proved the incorporation of Sn into the In2O3 structure. Various parameters such as concentration of precursors, effect of stirring and effect of annealing were varied to investigate their effect on the thin film formed. |
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