Comprehensive study of side-channel attack on emerging non-volatile memories
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to d...
Main Authors: | , , , , , |
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Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/153959 |