Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer

Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer

We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlOx passivation layer. The interfacial region between the IGZO layer and the AlOx layer played a crucial role in improving the field-effect mobility (the maximum field-effect mobility in...

Descrición completa

Detalles Bibliográficos
Main Authors: Li, Yuanbo, Sun, Jianxun, Salim, Teddy, Liu, Rongyue, Chen, Tupei
Outros autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado: 2022
Subjects:
Engineering::Electrical and electronic engineering
Engineering::Materials
Aluminum Compounds
Carrier Concentration
Acceso en liña:https://hdl.handle.net/10356/154057

Internet

https://hdl.handle.net/10356/154057

Títulos similares