Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer

Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer

We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlOx passivation layer. The interfacial region between the IGZO layer and the AlOx layer played a crucial role in improving the field-effect mobility (the maximum field-effect mobility in...

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Bibliographic Details
Main Authors: Li, Yuanbo, Sun, Jianxun, Salim, Teddy, Liu, Rongyue, Chen, Tupei
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Engineering::Materials
Aluminum Compounds
Carrier Concentration
Online Access:https://hdl.handle.net/10356/154057

Internet

https://hdl.handle.net/10356/154057

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