Non-linear thermal resistance model for the simulation of high power GaN-based devices

Non-linear thermal resistance model for the simulation of high power GaN-based devices

We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature d...

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Detaylı Bibliyografya
Asıl Yazarlar: Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
Diğer Yazarlar: Temasek Laboratories @ NTU
Materyal Türü: Journal Article
Dil:English
Baskı/Yayın Bilgisi: 2022
Konular:
Engineering::Electrical and electronic engineering
Electrothermal Effects
Power Semiconductor Devices
Online Erişim:https://hdl.handle.net/10356/154965

Internet

https://hdl.handle.net/10356/154965

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