High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast b...

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书目详细资料
Main Authors: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Chew, Kai Yang, Cheah, Jun Wei, Gan, Chee Lip
其他作者: School of Materials Science and Engineering
格式: Journal Article
语言:English
出版: 2022
主题:
在线阅读:https://hdl.handle.net/10356/156017