High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)
By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast b...
| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | Journal Article |
| 语言: | English |
| 出版: |
2022
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| 主题: | |
| 在线阅读: | https://hdl.handle.net/10356/156017 |