High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast b...

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Bibliographic Details
Main Authors: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Chew, Kai Yang, Cheah, Jun Wei, Gan, Chee Lip
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Materials::Testing of materials
Floating Gate of EEPROM
Front-Side Sample Preparation
Scanning Nonlinear Dielectric Microscopy
Data Retrieval
Online Access:https://hdl.handle.net/10356/156017

Internet

https://hdl.handle.net/10356/156017

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