Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and charact...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/156311 |