Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and charact...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/156311 |
| _version_ | 1826118483867336704 |
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| author | Wong, Yi Jing |
| author2 | Radhakrishnan K |
| author_facet | Radhakrishnan K Wong, Yi Jing |
| author_sort | Wong, Yi Jing |
| collection | NTU |
| description | This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results. |
| first_indexed | 2024-10-01T04:44:10Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/156311 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:44:10Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1563112023-01-09T01:46:04Z Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications Wong, Yi Jing Radhakrishnan K Raju V. Ramanujan School of Materials Science and Engineering Ramanujan@ntu.edu.sg, ERADHA@ntu.edu.sg Engineering::Materials::Microelectronics and semiconductor materials This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results. Bachelor of Engineering (Materials Engineering) 2022-04-24T13:36:00Z 2022-04-24T13:36:00Z 2022 Final Year Project (FYP) Wong, Y. J. (2022). Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156311 https://hdl.handle.net/10356/156311 en MSE/21/112 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Materials::Microelectronics and semiconductor materials Wong, Yi Jing Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title_full | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title_fullStr | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title_full_unstemmed | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title_short | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications |
| title_sort | simulation and characterization of two dimensional hole gas in gan heterostructures for gan hemt applications |
| topic | Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/156311 |
| work_keys_str_mv | AT wongyijing simulationandcharacterizationoftwodimensionalholegasinganheterostructuresforganhemtapplications |