1D photonic crystal direct bandgap GeSn-on- insulator laser

1D photonic crystal direct bandgap GeSn-on- insulator laser

GeSn alloys have been regarded as a potential lasing material for a complementary metal–oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated...

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Dades bibliogràfiques
Autors principals: Joo, Hyo-Jun, Kim, Youngmin, Burt, Daniel, Jung, Yongduck, Zhang, Lin, Chen, Melvina, Parluhutan, Samue Jior, Kang, Dong-Ho, Lee, Chulwon, Assali, Simone, Ikonic, Zoran, Moutanabbir, Oussama, Cho, Yong-Hoon, Tan, Chuan Seng, Nam, Donguk
Altres autors: School of Electrical and Electronic Engineering
Format: Journal Article
Idioma:English
Publicat: 2022
Matèries:
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Light-Emission
Nanocavity
Accés en línia:https://hdl.handle.net/10356/156408

Internet

https://hdl.handle.net/10356/156408

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