Enhanced electric resistivity and dielectric energy storage by vacancy defect complex
The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy...
| Main Authors: | , , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156689 |
| _version_ | 1811682314163322880 |
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| author | Pan, Hao Feng, Nan Xu, Xing Li, Weiwei Zhang, Qinghua Lan, Shun Liu, Yi-Qian Sha, Haozhi Bi, Ke Xu, Ben Ma, Jing Gu, Lin Yu, Rong Shen, Yang Wang, Renshaw Xiao MacManus-Driscoll, Judith L. Chen, Chong-Lin Nan, Ce-Wen Lin, Yuan-Hua |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Pan, Hao Feng, Nan Xu, Xing Li, Weiwei Zhang, Qinghua Lan, Shun Liu, Yi-Qian Sha, Haozhi Bi, Ke Xu, Ben Ma, Jing Gu, Lin Yu, Rong Shen, Yang Wang, Renshaw Xiao MacManus-Driscoll, Judith L. Chen, Chong-Lin Nan, Ce-Wen Lin, Yuan-Hua |
| author_sort | Pan, Hao |
| collection | NTU |
| description | The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO 3 -based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen- pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm − 3 ), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications. |
| first_indexed | 2024-10-01T03:54:52Z |
| format | Journal Article |
| id | ntu-10356/156689 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:54:52Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1566892023-02-28T20:01:31Z Enhanced electric resistivity and dielectric energy storage by vacancy defect complex Pan, Hao Feng, Nan Xu, Xing Li, Weiwei Zhang, Qinghua Lan, Shun Liu, Yi-Qian Sha, Haozhi Bi, Ke Xu, Ben Ma, Jing Gu, Lin Yu, Rong Shen, Yang Wang, Renshaw Xiao MacManus-Driscoll, Judith L. Chen, Chong-Lin Nan, Ce-Wen Lin, Yuan-Hua School of Physical and Mathematical Sciences Science::Physics Dielectric Energy Storage Defect The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO 3 -based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen- pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm − 3 ), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications. National Research Foundation (NRF) Submitted/Accepted version This work was supported by the Natural Science Foundation of China (NSFC) via the Basic Science Center Project grant 51788104, NSFC Grants 51532003, 51790490, 52072209 and 1729201. X.R.W. acknowledges supports from the Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Grant No. NRF-CRP21–2018–0003). J.L.MD. would like to thank the Royal Academy of Engineering grant CIET 1819_24. 2022-04-21T01:00:31Z 2022-04-21T01:00:31Z 2021 Journal Article Pan, H., Feng, N., Xu, X., Li, W., Zhang, Q., Lan, S., Liu, Y., Sha, H., Bi, K., Xu, B., Ma, J., Gu, L., Yu, R., Shen, Y., Wang, R. X., MacManus-Driscoll, J. L., Chen, C., Nan, C. & Lin, Y. (2021). Enhanced electric resistivity and dielectric energy storage by vacancy defect complex. Energy Storage Materials, 42, 836-844. https://dx.doi.org/10.1016/j.ensm.2021.08.027 2405-8297 https://hdl.handle.net/10356/156689 10.1016/j.ensm.2021.08.027 42 836 844 en NRF-CRP21–2018–0003 Energy Storage Materials © 2021 Elsevier B.V. All rights reserved. This paper was published in Energy Storage Materials and is made available with permission of Elsevier B.V. application/pdf |
| spellingShingle | Science::Physics Dielectric Energy Storage Defect Pan, Hao Feng, Nan Xu, Xing Li, Weiwei Zhang, Qinghua Lan, Shun Liu, Yi-Qian Sha, Haozhi Bi, Ke Xu, Ben Ma, Jing Gu, Lin Yu, Rong Shen, Yang Wang, Renshaw Xiao MacManus-Driscoll, Judith L. Chen, Chong-Lin Nan, Ce-Wen Lin, Yuan-Hua Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title | Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title_full | Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title_fullStr | Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title_full_unstemmed | Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title_short | Enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| title_sort | enhanced electric resistivity and dielectric energy storage by vacancy defect complex |
| topic | Science::Physics Dielectric Energy Storage Defect |
| url | https://hdl.handle.net/10356/156689 |
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