Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a releasable form (e.g., free-standing PGe) by lithography-free metal-assisted chemical etching (MacEtch) at room temperature under open-circuit. A thin layer of Au is evaporated on the entire surface of c-Ge and Ge on ins...

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Bibliographic Details
Main Authors: Zhang, Yi-Yu, Shin, Sang-Ho, Kang, Hyeok-Joong, Jeon, Sohee, Hwang, Soon Hyoung, Zhou, Weidong, Jeong, Jun-Ho, Li, Xiuling, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Metal-Assisted Chemical Etching
Anti-Reflection
Online Access:https://hdl.handle.net/10356/156876

Internet

https://hdl.handle.net/10356/156876

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