Studies of gallium nitride high electron mobility transistors (HEMTs)
Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that offer many unique properties. It not only offers higher breakdown strength, faster switching speed and lower on resistance, it significantly outperforms the traditional silicon-based device. These properties have been...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
Nanyang Technological University
2022
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/157799 |