Studies of gallium nitride high electron mobility transistors (HEMTs)
Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that offer many unique properties. It not only offers higher breakdown strength, faster switching speed and lower on resistance, it significantly outperforms the traditional silicon-based device. These properties have been...
Main Author: | Tie, Keven Guo Sheng |
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Other Authors: | Ng Geok Ing |
Format: | Final Year Project (FYP) |
Language: | English |
Published: |
Nanyang Technological University
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/157799 |
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