PMOSFET PBTI (positive-bias temperature instability) measurement using ultra-fast switching method
Similar to negative bias temperature instability (NBTI), positive bias temperature instability (PBTI) also causes the build-up of positive charge in the gate dielectric of the p-MOSFET, resulting in threshold voltage (VT) increase and drain current decrease, which eventually lead to circuit failure....
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/15796 |