Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor)
Attributed to its superlative wide bandgap properties, Silicon Carbide (SiC) has been the natural choice of material for the fabrication of high temperature, power and frequency semiconductor devices. When the material is processed to grow a layer of high-quality thermal oxide (Silicon Dioxide), the...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/157979 |