Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor)
Attributed to its superlative wide bandgap properties, Silicon Carbide (SiC) has been the natural choice of material for the fabrication of high temperature, power and frequency semiconductor devices. When the material is processed to grow a layer of high-quality thermal oxide (Silicon Dioxide), the...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/157979 |
| _version_ | 1826119134486724608 |
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| author | Chan, Matthew Nigel Zhen Yu |
| author2 | Ali Iftekhar Maswood |
| author_facet | Ali Iftekhar Maswood Chan, Matthew Nigel Zhen Yu |
| author_sort | Chan, Matthew Nigel Zhen Yu |
| collection | NTU |
| description | Attributed to its superlative wide bandgap properties, Silicon Carbide (SiC) has been the natural choice of material for the fabrication of high temperature, power and frequency semiconductor devices. When the material is processed to grow a layer of high-quality thermal oxide (Silicon Dioxide), the Silicon Carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) can be fabricated. The promising advent of SiC MOSFETs has allowed for the production of smaller, lighter, faster and more efficient power electronic devices when compared alongside with its Silicon counterpart. As such, with its rapid and wide-scale implications in modern power electronic systems, the durability and survivability of the power semiconductor device is highly crucial.
As such, this dissertation presents the comprehensive study of the various failure mechanisms and contemporary protection measures of the SiC MOSFET. LTspice which is a widely used analogue electronic simulation software was used to simulate the device characteristics under certain test conditions. Additionally, the analysis and evaluation of several conducted practical experiments are also presented in this dissertation. The purpose is to assess and understand the reliability of SiC MOSFET protection measures under short circuit fault conditions. This report complements the double pulse and hard switching fault functional tests, offering a deeper comprehension into power electronic technology related aspects. |
| first_indexed | 2024-10-01T04:55:07Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/157979 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:55:07Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1579792023-07-07T19:07:14Z Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) Chan, Matthew Nigel Zhen Yu Ali Iftekhar Maswood School of Electrical and Electronic Engineering EAMASWOOD@ntu.edu.sg Engineering::Electrical and electronic engineering::Electric power Engineering::Electrical and electronic engineering::Electronic circuits Attributed to its superlative wide bandgap properties, Silicon Carbide (SiC) has been the natural choice of material for the fabrication of high temperature, power and frequency semiconductor devices. When the material is processed to grow a layer of high-quality thermal oxide (Silicon Dioxide), the Silicon Carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) can be fabricated. The promising advent of SiC MOSFETs has allowed for the production of smaller, lighter, faster and more efficient power electronic devices when compared alongside with its Silicon counterpart. As such, with its rapid and wide-scale implications in modern power electronic systems, the durability and survivability of the power semiconductor device is highly crucial. As such, this dissertation presents the comprehensive study of the various failure mechanisms and contemporary protection measures of the SiC MOSFET. LTspice which is a widely used analogue electronic simulation software was used to simulate the device characteristics under certain test conditions. Additionally, the analysis and evaluation of several conducted practical experiments are also presented in this dissertation. The purpose is to assess and understand the reliability of SiC MOSFET protection measures under short circuit fault conditions. This report complements the double pulse and hard switching fault functional tests, offering a deeper comprehension into power electronic technology related aspects. Bachelor of Engineering (Electrical and Electronic Engineering) 2022-05-24T05:13:21Z 2022-05-24T05:13:21Z 2022 Final Year Project (FYP) Chan, M. N. Z. Y. (2022). Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor). Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157979 https://hdl.handle.net/10356/157979 en A1001-211 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering::Electric power Engineering::Electrical and electronic engineering::Electronic circuits Chan, Matthew Nigel Zhen Yu Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title | Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title_full | Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title_fullStr | Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title_full_unstemmed | Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title_short | Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) |
| title_sort | investigation of wide bandgap device silicon carbide metal oxide semiconductor field effect transistor |
| topic | Engineering::Electrical and electronic engineering::Electric power Engineering::Electrical and electronic engineering::Electronic circuits |
| url | https://hdl.handle.net/10356/157979 |
| work_keys_str_mv | AT chanmatthewnigelzhenyu investigationofwidebandgapdevicesiliconcarbidemetaloxidesemiconductorfieldeffecttransistor |