LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays

RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatibility with CMOS technology, is a potential NVM technology. It is considered as the next-generation high density storage and high-performance computing technology, and also, a powerful alternative of f...

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Detalhes bibliográficos
Autor principal: Du, Yifan
Outros Autores: Chen Tupei
Formato: Thesis-Master by Coursework
Idioma:English
Publicado em: Nanyang Technological University 2022
Assuntos:
Acesso em linha:https://hdl.handle.net/10356/159456