Atomic layer deposition of palladium thin film from palladium (II) hexafluoroacetylacetonate and ozone reactant

Palladium thin films have been grown by thermal atomic layer (ALD) process using Palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) and O3 as the precursors without molecular hydrogen or formalin in a temperature range of 180–220 °C. The palladium films were deposited on sapphire (α-Al2O3, (0001))...

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Bibliographic Details
Main Authors: Zou, Yiming, Li, Jiahui, Cheng, Chunyu, Wang, Zhiwei, Ong, Amanda Jiamin, Goei, Ronn, Li, Xianglin, Li, Shuzhou, Tok, Alfred Iing Yoong
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/159583