Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

GeSn alloys are a promising emerging complementary metal-oxide-semiconductor compatible technology for applications in photonics and electronics. However, the unavoidable intrinsic compressive strain introduced during epitaxial growth has prevented researchers from pushing the performance of GeSn de...

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Bibliographic Details
Main Authors: Burt, Daniel, Joo, Hyo-Jun, Kim, Youngmin, Jung, Yongduck, Chen, Melvina, Luo, Manlin, Kang, Dong-Ho, Assali, Simone, Zhang, Lin, Son, Bongkwon, Fan, Weijun, Moutanabbir, Oussama, Ikonic, Zoran, Tan, Chuan Seng, Huang, Yi-Chiau, Nam, Donguk
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/159991

Internet

https://hdl.handle.net/10356/159991

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