Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

Resistive Random-Access Memory (RRAM) by virtue of its simple metal-insulator-metal structure, high scalability, excellent device density and the potential to become a future universal memory format of an industry fast approaching a limit to Moore’s law scaling has seen tremendous research over the...

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Bibliographic Details
Main Author: Kalaga, Pranav Sairam
Other Authors: Ang Diing Shenp
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2022
Subjects:
Engineering::Electrical and electronic engineering::Microelectronics
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/160030

Internet

https://hdl.handle.net/10356/160030

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