Electronic and optical modulation of pine tree-like nanostructures of gallium nitride

We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe anE2H...

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Príomhchruthaitheoirí: Saleem, Umar, Tjahjana, Liliana, Arramel, Ahmad, Faozan, Hardhienata, Hendradi, Maddalena, Francesco, Birowosuto, Muhammad Danang, Wang, Hong
Rannpháirtithe: School of Electrical and Electronic Engineering
Formáid: Journal Article
Teanga:English
Foilsithe / Cruthaithe: 2022
Ábhair:
Rochtain ar líne:https://hdl.handle.net/10356/160169