Electronic and optical modulation of pine tree-like nanostructures of gallium nitride
We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe anE2H...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/160169 |
| _version_ | 1826114051256614912 |
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| author | Saleem, Umar Tjahjana, Liliana Arramel Ahmad, Faozan Hardhienata, Hendradi Maddalena, Francesco Birowosuto, Muhammad Danang Wang, Hong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Saleem, Umar Tjahjana, Liliana Arramel Ahmad, Faozan Hardhienata, Hendradi Maddalena, Francesco Birowosuto, Muhammad Danang Wang, Hong |
| author_sort | Saleem, Umar |
| collection | NTU |
| description | We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe anE2Hpeak at 570 ± 6 cm-1which is the primary characteristic of wurtzite. X-ray and ultraviolet photoemission spectroscopy reveal that the electronic structures of GaN PTLNs indicate an n-type character, while the work function and valence band maximum are determined to be 3.30 ± 0.05 and 3.85 ± 0.08 eV, respectively. We confirm the electronic nature of our structure from the current-voltage characteristics exhibiting rectifying behavior. Density functional theory calculations of GaN PTLNs modeled by germanium-doped GaN nanowires are consistent with our experimental findings. To summarize, the energy-band diagram is presented for the future of GaN PTLNs in the optoelectronic and sensing applications. |
| first_indexed | 2024-10-01T03:33:11Z |
| format | Journal Article |
| id | ntu-10356/160169 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:33:11Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1601692022-07-14T02:51:32Z Electronic and optical modulation of pine tree-like nanostructures of gallium nitride Saleem, Umar Tjahjana, Liliana Arramel Ahmad, Faozan Hardhienata, Hendradi Maddalena, Francesco Birowosuto, Muhammad Danang Wang, Hong School of Electrical and Electronic Engineering CNRS International NTU THALES Research Alliances Engineering::Materials Nanowires Growth We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe anE2Hpeak at 570 ± 6 cm-1which is the primary characteristic of wurtzite. X-ray and ultraviolet photoemission spectroscopy reveal that the electronic structures of GaN PTLNs indicate an n-type character, while the work function and valence band maximum are determined to be 3.30 ± 0.05 and 3.85 ± 0.08 eV, respectively. We confirm the electronic nature of our structure from the current-voltage characteristics exhibiting rectifying behavior. Density functional theory calculations of GaN PTLNs modeled by germanium-doped GaN nanowires are consistent with our experimental findings. To summarize, the energy-band diagram is presented for the future of GaN PTLNs in the optoelectronic and sensing applications. Ministry of Education (MOE) This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2, grant no. MOE2016-T2-1-052 and Tier 1, grant no. MOE2019-T1-002063. F.A. and H.H. would like to acknowledge Toray Science and Technology Research Grant 2021. 2022-07-14T02:51:32Z 2022-07-14T02:51:32Z 2021 Journal Article Saleem, U., Tjahjana, L., Arramel, Ahmad, F., Hardhienata, H., Maddalena, F., Birowosuto, M. D. & Wang, H. (2021). Electronic and optical modulation of pine tree-like nanostructures of gallium nitride. Journal of Physical Chemistry C, 125(25), 13917-13924. https://dx.doi.org/10.1021/acs.jpcc.1c02819 1932-7447 https://hdl.handle.net/10356/160169 10.1021/acs.jpcc.1c02819 2-s2.0-85110308385 25 125 13917 13924 en MOE2016-T2-1-052 MOE2019-T1-002-063 Journal of Physical Chemistry C © 2021 American Chemical Society. All rights reserved. |
| spellingShingle | Engineering::Materials Nanowires Growth Saleem, Umar Tjahjana, Liliana Arramel Ahmad, Faozan Hardhienata, Hendradi Maddalena, Francesco Birowosuto, Muhammad Danang Wang, Hong Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title | Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title_full | Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title_fullStr | Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title_full_unstemmed | Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title_short | Electronic and optical modulation of pine tree-like nanostructures of gallium nitride |
| title_sort | electronic and optical modulation of pine tree like nanostructures of gallium nitride |
| topic | Engineering::Materials Nanowires Growth |
| url | https://hdl.handle.net/10356/160169 |
| work_keys_str_mv | AT saleemumar electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT tjahjanaliliana electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT arramel electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT ahmadfaozan electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT hardhienatahendradi electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT maddalenafrancesco electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT birowosutomuhammaddanang electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride AT wanghong electronicandopticalmodulationofpinetreelikenanostructuresofgalliumnitride |