Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/160535 |
| _version_ | 1811681050166820864 |
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| author | Teo, Adrian J. T. Li, Holden King Ho |
| author2 | School of Mechanical and Aerospace Engineering |
| author_facet | School of Mechanical and Aerospace Engineering Teo, Adrian J. T. Li, Holden King Ho |
| author_sort | Teo, Adrian J. T. |
| collection | NTU |
| description | A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V. |
| first_indexed | 2024-10-01T03:34:47Z |
| format | Journal Article |
| id | ntu-10356/160535 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:34:47Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1605352022-07-26T06:36:04Z Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes Teo, Adrian J. T. Li, Holden King Ho School of Mechanical and Aerospace Engineering Engineering::Mechanical engineering 3D MEMS Wafer Bonding A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V. Published version This research was funded by the Defense Advanced Research Projects Agency (DARPA) under contract HR0011-09-2-0004. 2022-07-26T06:36:04Z 2022-07-26T06:36:04Z 2021 Journal Article Teo, A. J. T. & Li, H. K. H. (2021). Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes. Micromachines, 12(12), 1481-. https://dx.doi.org/10.3390/mi12121481 2072-666X https://hdl.handle.net/10356/160535 10.3390/mi12121481 34945331 2-s2.0-85122141955 12 12 1481 en Micromachines © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). application/pdf |
| spellingShingle | Engineering::Mechanical engineering 3D MEMS Wafer Bonding Teo, Adrian J. T. Li, Holden King Ho Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title | Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title_full | Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title_fullStr | Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title_full_unstemmed | Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title_short | Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes |
| title_sort | realization of three dimensionally mems stacked comb structures for microactuators using low temperature multi wafer bonding with self alignment techniques in cmos compatible processes |
| topic | Engineering::Mechanical engineering 3D MEMS Wafer Bonding |
| url | https://hdl.handle.net/10356/160535 |
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