Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD
As one of the most fundamental aspects of nanomaterials, the crystal orientation in semiconductor nanowires (NWs) profoundly reshapes their properties, e.g. surface chemistry, optical response and electrical transport. Among the various semiconductor NWs, free-standing InSb NWs hold promise for maki...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/160987 |