Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD
As one of the most fundamental aspects of nanomaterials, the crystal orientation in semiconductor nanowires (NWs) profoundly reshapes their properties, e.g. surface chemistry, optical response and electrical transport. Among the various semiconductor NWs, free-standing InSb NWs hold promise for maki...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/160987 |
| _version_ | 1826123395156148224 |
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| author | Jin, Y. J. Zheng, X. E. Gong, S. J. Ke, Chang Xiao, M. Q. Ling, B. Yu, S. Y. Zhang, Dao Hua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jin, Y. J. Zheng, X. E. Gong, S. J. Ke, Chang Xiao, M. Q. Ling, B. Yu, S. Y. Zhang, Dao Hua |
| author_sort | Jin, Y. J. |
| collection | NTU |
| description | As one of the most fundamental aspects of nanomaterials, the crystal orientation in semiconductor nanowires (NWs) profoundly reshapes their properties, e.g. surface chemistry, optical response and electrical transport. Among the various semiconductor NWs, free-standing InSb NWs hold promise for making high speed and low power vertically integrated nanowire transistors, chemical/biological sensors, etc. However, the difficulty of controlling the crystal orientation and growing well-defined single crystal NWs is limiting the applications. In this work, (111)-orientated vertical InSb NWs are achieved on GaAs substrate through a hetero-epitaxy process by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as temperature, rV/III ratio on the InSb NWs have been studied systematically. In addition, a substrate caused NW morphology variation is observed and explained with a phenomenological model. |
| first_indexed | 2024-10-01T06:03:57Z |
| format | Journal Article |
| id | ntu-10356/160987 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:03:57Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1609872022-08-10T07:27:43Z Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD Jin, Y. J. Zheng, X. E. Gong, S. J. Ke, Chang Xiao, M. Q. Ling, B. Yu, S. Y. Zhang, Dao Hua School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering InSb Nanowire As one of the most fundamental aspects of nanomaterials, the crystal orientation in semiconductor nanowires (NWs) profoundly reshapes their properties, e.g. surface chemistry, optical response and electrical transport. Among the various semiconductor NWs, free-standing InSb NWs hold promise for making high speed and low power vertically integrated nanowire transistors, chemical/biological sensors, etc. However, the difficulty of controlling the crystal orientation and growing well-defined single crystal NWs is limiting the applications. In this work, (111)-orientated vertical InSb NWs are achieved on GaAs substrate through a hetero-epitaxy process by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as temperature, rV/III ratio on the InSb NWs have been studied systematically. In addition, a substrate caused NW morphology variation is observed and explained with a phenomenological model. This work is supported by Sun Yat-Sen University Special Project for Exploration in the Field of National Defense Scientific (76120-31143411). 2022-08-10T07:27:43Z 2022-08-10T07:27:43Z 2020 Journal Article Jin, Y. J., Zheng, X. E., Gong, S. J., Ke, C., Xiao, M. Q., Ling, B., Yu, S. Y. & Zhang, D. H. (2020). Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD. Journal of Alloys and Compounds, 823, 153758-. https://dx.doi.org/10.1016/j.jallcom.2020.153758 0925-8388 https://hdl.handle.net/10356/160987 10.1016/j.jallcom.2020.153758 2-s2.0-85077933419 823 153758 en Journal of Alloys and Compounds © 2020 Elsevier B.V. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering InSb Nanowire Jin, Y. J. Zheng, X. E. Gong, S. J. Ke, Chang Xiao, M. Q. Ling, B. Yu, S. Y. Zhang, Dao Hua Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title | Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title_full | Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title_fullStr | Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title_full_unstemmed | Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title_short | Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD |
| title_sort | hetero epitaxial growth and mechanism of one dimensional insb nanostructures on gaas substrate by mocvd |
| topic | Engineering::Electrical and electronic engineering InSb Nanowire |
| url | https://hdl.handle.net/10356/160987 |
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