Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions

Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions

Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric c...

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Bibliographic Details
Main Authors: Chi, Xiao, Guo, Rui, Xiong, Juxia, Ren, Lizhu, Peng, Xinwen, Tay, Beng Kang, Chen, Jingsheng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Engineering::Materials
Magnetic Tunnel Junctions
Magnetoresistance
Online Access:https://hdl.handle.net/10356/162301

Internet

https://hdl.handle.net/10356/162301

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