Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions
Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric c...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/162301 |
| _version_ | 1826112491030052864 |
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| author | Chi, Xiao Guo, Rui Xiong, Juxia Ren, Lizhu Peng, Xinwen Tay, Beng Kang Chen, Jingsheng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Chi, Xiao Guo, Rui Xiong, Juxia Ren, Lizhu Peng, Xinwen Tay, Beng Kang Chen, Jingsheng |
| author_sort | Chi, Xiao |
| collection | NTU |
| description | Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La0.5Sr0.5MnO3/BaTiO3 (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices. |
| first_indexed | 2024-10-01T03:07:54Z |
| format | Journal Article |
| id | ntu-10356/162301 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:07:54Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1623012022-10-12T04:41:48Z Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions Chi, Xiao Guo, Rui Xiong, Juxia Ren, Lizhu Peng, Xinwen Tay, Beng Kang Chen, Jingsheng School of Electrical and Electronic Engineering School of Materials Science and Engineering UMI 3288 CINTRA (CNRS-NTU-THALES Research Alliances) Centre for Micro- and Nano-Electronics (CMNE) Engineering::Electrical and electronic engineering Engineering::Materials Magnetic Tunnel Junctions Magnetoresistance Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La0.5Sr0.5MnO3/BaTiO3 (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) This work was supported by China Science Foundation Grant (no. 2019T120725 and no. 2019M652882), Singapore MOE2018-T2-2-043, MOE2019-T2-2-075, and A*STAR grant no. A1983C0036, A*STAR IAF-ICP 11801E0036. 2022-10-12T04:41:48Z 2022-10-12T04:41:48Z 2021 Journal Article Chi, X., Guo, R., Xiong, J., Ren, L., Peng, X., Tay, B. K. & Chen, J. (2021). Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions. ACS Applied Materials and Interfaces, 13(47), 56638-56644. https://dx.doi.org/10.1021/acsami.1c15836 1944-8244 https://hdl.handle.net/10356/162301 10.1021/acsami.1c15836 34786928 2-s2.0-85119978669 47 13 56638 56644 en MOE2018-T2-2-043 MOE2019-T2-2-075 A1983C0036 11801E0036 ACS Applied Materials and Interfaces © 2021 American Chemical Society. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Engineering::Materials Magnetic Tunnel Junctions Magnetoresistance Chi, Xiao Guo, Rui Xiong, Juxia Ren, Lizhu Peng, Xinwen Tay, Beng Kang Chen, Jingsheng Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title | Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title_full | Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title_fullStr | Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title_full_unstemmed | Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title_short | Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions |
| title_sort | enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic magnetic reconstructions |
| topic | Engineering::Electrical and electronic engineering Engineering::Materials Magnetic Tunnel Junctions Magnetoresistance |
| url | https://hdl.handle.net/10356/162301 |
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