Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions
Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric c...
Main Authors: | Chi, Xiao, Guo, Rui, Xiong, Juxia, Ren, Lizhu, Peng, Xinwen, Tay, Beng Kang, Chen, Jingsheng |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2022
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/162301 |
Similar Items
-
Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
by: Pan, Haiyang, et al.
Published: (2024) -
An Epitaxial Ferroelectric Tunnel Junction on Silicon
by: Li, Zhipeng, et al.
Published: (2016) -
Passivating contact-based tunnel junction Si solar cells using machine learning for tandem cell applications
by: Park, Hyunjung, et al.
Published: (2024) -
Fabrication and characterization of colossal magnetoresistance manganites in bulk, single layer and trilayer thin films prepared by pulsed laser deposition technique
by: Navasery, Manizheh
Published: (2012) -
Nonsaturating large magnetoresistance in semimetals
by: Leahy, Ian A., et al.
Published: (2020)