Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model

Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model

Ultra-fast switching speed and low switching loss of the gallium nitride high electron mobility transistors enable the realisation of high power density converter with excellent conversion efficiency. However, the rapid switching transition leads to significant overshoot and crosstalk issues that ca...

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Bibliographic Details
Main Authors: Wu, Yingzhe, Yin, Shan, Dong, Minghai, Jin, Shoudong, Li, Hui, Cheng, Yuhua, See, Kye Yak
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Fast Switching
High Electron-Mobility Transistors
Online Access:https://hdl.handle.net/10356/163027

Internet

https://hdl.handle.net/10356/163027

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