CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate

CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate

In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristi...

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Bibliographic Details
Main Authors: Wang, Yue, Loke, Wan Khai, Gao, Yu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Gan, Chee Lip, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Heterojunction Bipolar Transistors
Ohmic Contacts
Online Access:https://hdl.handle.net/10356/163772

Internet

https://hdl.handle.net/10356/163772

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