CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristi...
Main Authors: | , , , , , , , , |
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其他作者: | |
格式: | Journal Article |
语言: | English |
出版: |
2022
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主题: | |
在线阅读: | https://hdl.handle.net/10356/163772 |