MoS₂/BiFeO₃-based solid-ionic transistor
The development of innovative memory and sensing devices fired up the 2D-based electronics to deal with the shortcomings of the silicon-based hardware. The breakthrough mechanisms of memory devices based on 2D channels are in the appalling need to overcome the bottlenecks of current 2D-based electro...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/163916 |