Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy: Park, Hyunjung, Kim, Jinsol, Choi, Dongjin, Lee, Sang-Won, Kang, Dongkyun, Lee, Hae-Seok, Kim, Donghwan, Kim, Munho, Kang, Yoonmook
Kolejni autorzy: School of Electrical and Electronic Engineering
Format: Journal Article
Język:English
Wydane: 2023
Hasła przedmiotowe:
Engineering::Electrical and electronic engineering
Boron-Doped Polysilicon
Crystalline Silicon
Dostęp online:https://hdl.handle.net/10356/164348

Internet

https://hdl.handle.net/10356/164348

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