Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells
This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164348 |
| _version_ | 1811694874594902016 |
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| author | Park, Hyunjung Kim, Jinsol Choi, Dongjin Lee, Sang-Won Kang, Dongkyun Lee, Hae-Seok Kim, Donghwan Kim, Munho Kang, Yoonmook |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Park, Hyunjung Kim, Jinsol Choi, Dongjin Lee, Sang-Won Kang, Dongkyun Lee, Hae-Seok Kim, Donghwan Kim, Munho Kang, Yoonmook |
| author_sort | Park, Hyunjung |
| collection | NTU |
| description | This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA). |
| first_indexed | 2024-10-01T07:14:31Z |
| format | Journal Article |
| id | ntu-10356/164348 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:14:31Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1643482023-01-17T04:58:10Z Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells Park, Hyunjung Kim, Jinsol Choi, Dongjin Lee, Sang-Won Kang, Dongkyun Lee, Hae-Seok Kim, Donghwan Kim, Munho Kang, Yoonmook School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Boron-Doped Polysilicon Crystalline Silicon This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA). Submitted/Accepted version This study was supported by the“Human Resources Program inEnergy Technology”of the Korea Institute of Energy TechnologyEvaluation and Planning (KETEP). Financial resources were receivedfrom the Ministry of Trade, Industry & Energy, Republic of Korea(20204010600470). Furthermore, the New & Renewable Energy CoreTechnology Program of the KETEP was granted financial support fromthe Ministry of Trade, Industry & Energy, Republic of Korea(20193020010390). 2023-01-17T04:58:10Z 2023-01-17T04:58:10Z 2022 Journal Article Park, H., Kim, J., Choi, D., Lee, S., Kang, D., Lee, H., Kim, D., Kim, M. & Kang, Y. (2022). Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells. Progress in Photovoltaics: Research and Applications. https://dx.doi.org/10.1002/pip.3648 1062-7995 https://hdl.handle.net/10356/164348 10.1002/pip.3648 2-s2.0-85142244991 en Progress in Photovoltaics: Research and Applications © 2022 John Wiley & Sons Ltd. All rights reserved. This is the peer reviewed version of the following article: Park, H., Kim, J., Choi, D., Lee, S., Kang, D., Lee, H., Kim, D., Kim, M. & Kang, Y. (2022). Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells. Progress in Photovoltaics: Research and Applications., which has been published in final form at https://doi.org/10.1002/pip.3648. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Boron-Doped Polysilicon Crystalline Silicon Park, Hyunjung Kim, Jinsol Choi, Dongjin Lee, Sang-Won Kang, Dongkyun Lee, Hae-Seok Kim, Donghwan Kim, Munho Kang, Yoonmook Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title | Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title_full | Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title_fullStr | Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title_full_unstemmed | Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title_short | Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells |
| title_sort | boron doped polysilicon using spin on doping for high efficiency both side passivating contact silicon solar cells |
| topic | Engineering::Electrical and electronic engineering Boron-Doped Polysilicon Crystalline Silicon |
| url | https://hdl.handle.net/10356/164348 |
| work_keys_str_mv | AT parkhyunjung borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT kimjinsol borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT choidongjin borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT leesangwon borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT kangdongkyun borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT leehaeseok borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT kimdonghwan borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT kimmunho borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells AT kangyoonmook borondopedpolysiliconusingspinondopingforhighefficiencybothsidepassivatingcontactsiliconsolarcells |