Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications
This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the o...
| Principais autores: | , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2023
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/164357 |