Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications

This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the o...

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Bibliographic Details
Main Authors: Kumar, Harshvardhan, Chen, Qimiao, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
GeSn
Photoresistor
Online Access:https://hdl.handle.net/10356/164357

Internet

https://hdl.handle.net/10356/164357

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