Improving carrier mobility in two-dimensional semiconductors with rippled materials

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–...

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Bibliographic Details
Main Authors: Ng, Hong Kuan, Du, Xiang, Suwardi, Ady, Hu, Guangwei, Ke, Yang, Zhao, Yunshan, Liu, Tao, Cao, Zhonghan, Liu, Huajun, Li, Shisheng, Cao, Jing, Zhu, Qiang, Dong, Zhaogang, Tan, Ivan Chee Kiang, Chi, Dongzhi, Qiu, Cheng-Wei, Hippalgaonkar, Kedar, Eda, Goki, Yang, Ming, Wu, Jing
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Materials::Microelectronics and semiconductor materials
Carrier Mobility
Field Effect Transistors
Online Access:https://hdl.handle.net/10356/164465

Internet

https://hdl.handle.net/10356/164465

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