Improving carrier mobility in two-dimensional semiconductors with rippled materials
Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–...
| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Online Access: | https://hdl.handle.net/10356/164465 |
| _version_ | 1826120341136605184 |
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| author | Ng, Hong Kuan Du, Xiang Suwardi, Ady Hu, Guangwei Ke, Yang Zhao, Yunshan Liu, Tao Cao, Zhonghan Liu, Huajun Li, Shisheng Cao, Jing Zhu, Qiang Dong, Zhaogang Tan, Ivan Chee Kiang Chi, Dongzhi Qiu, Cheng-Wei Hippalgaonkar, Kedar Eda, Goki Yang, Ming Wu, Jing |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Ng, Hong Kuan Du, Xiang Suwardi, Ady Hu, Guangwei Ke, Yang Zhao, Yunshan Liu, Tao Cao, Zhonghan Liu, Huajun Li, Shisheng Cao, Jing Zhu, Qiang Dong, Zhaogang Tan, Ivan Chee Kiang Chi, Dongzhi Qiu, Cheng-Wei Hippalgaonkar, Kedar Eda, Goki Yang, Ming Wu, Jing |
| author_sort | Ng, Hong Kuan |
| collection | NTU |
| description | Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice distortions into 2D molybdenum disulfide (MoS2) using bulged substrates, which create ripples in the 2D material leading to a change in the dielectric constant and a suppressed phonon scattering. A two orders of magnitude enhancement in room-temperature mobility is observed in rippled MoS2, reaching ∼900 cm2 V−1 s−1, which exceeds the predicted phonon-limited mobility of flat MoS2 of 200–410 cm2 V−1 s−1. We show that our approach can be used to create high-performance room-temperature field-effect transistors and thermoelectric devices. |
| first_indexed | 2024-10-01T05:14:54Z |
| format | Journal Article |
| id | ntu-10356/164465 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:14:54Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1644652023-07-14T16:07:33Z Improving carrier mobility in two-dimensional semiconductors with rippled materials Ng, Hong Kuan Du, Xiang Suwardi, Ady Hu, Guangwei Ke, Yang Zhao, Yunshan Liu, Tao Cao, Zhonghan Liu, Huajun Li, Shisheng Cao, Jing Zhu, Qiang Dong, Zhaogang Tan, Ivan Chee Kiang Chi, Dongzhi Qiu, Cheng-Wei Hippalgaonkar, Kedar Eda, Goki Yang, Ming Wu, Jing School of Materials Science and Engineering Institute of Materials Research and Engineering, A*STAR Engineering::Materials::Microelectronics and semiconductor materials Carrier Mobility Field Effect Transistors Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice distortions into 2D molybdenum disulfide (MoS2) using bulged substrates, which create ripples in the 2D material leading to a change in the dielectric constant and a suppressed phonon scattering. A two orders of magnitude enhancement in room-temperature mobility is observed in rippled MoS2, reaching ∼900 cm2 V−1 s−1, which exceeds the predicted phonon-limited mobility of flat MoS2 of 200–410 cm2 V−1 s−1. We show that our approach can be used to create high-performance room-temperature field-effect transistors and thermoelectric devices. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) Submitted/Accepted version J.W. acknowledges the SERC Central Research Fund (CRF KIMR211001kSERCRF) and Advanced Manufacturing and Engineering Young Individual Research Grant (AME YIRG grant no. A2084c170). D.C. and J.W. acknowledge National Research Foundation Competitive Research Programs (NRFCRP24-2020-0002). M.Y. acknowledges funding support (project IDs 1-BE47, ZE0C, ZE2F and ZE2X) from The Hong Kong Polytechnic University. K.H. acknowledges funding from the Accelerated Materials Development for Manufacturing Program at the Agency for Science, Technology and Research (A*STAR) via the AME Programmatic Fund under grant no. A1898b0043. D.X. and T.L. acknowledge the Young Scientist project of the MOE Innovation platform. D.X. acknowledges the National Natural Science Foundation (NSF) of China (grant no. 62104041) and Shanghai Sailing Program (grant no. 21YF1402600). T.L. acknowledges the NSF of Shanghai (grant no. 22ZR1405700). 2023-01-30T02:48:10Z 2023-01-30T02:48:10Z 2022 Journal Article Ng, H. K., Du, X., Suwardi, A., Hu, G., Ke, Y., Zhao, Y., Liu, T., Cao, Z., Liu, H., Li, S., Cao, J., Zhu, Q., Dong, Z., Tan, I. C. K., Chi, D., Qiu, C., Hippalgaonkar, K., Eda, G., Yang, M. & Wu, J. (2022). Improving carrier mobility in two-dimensional semiconductors with rippled materials. Nature Electronics, 5, 489-496. https://dx.doi.org/10.1038/s41928-022-00777-z 2520-1131 https://hdl.handle.net/10356/164465 10.1038/s41928-022-00777-z 5 489 496 en A1898b0043 Nature Electronics © 2022 The Author(s), under exclusive licence to Springer Nature Limited All rights reserved. This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41928-022-00777-z. application/pdf |
| spellingShingle | Engineering::Materials::Microelectronics and semiconductor materials Carrier Mobility Field Effect Transistors Ng, Hong Kuan Du, Xiang Suwardi, Ady Hu, Guangwei Ke, Yang Zhao, Yunshan Liu, Tao Cao, Zhonghan Liu, Huajun Li, Shisheng Cao, Jing Zhu, Qiang Dong, Zhaogang Tan, Ivan Chee Kiang Chi, Dongzhi Qiu, Cheng-Wei Hippalgaonkar, Kedar Eda, Goki Yang, Ming Wu, Jing Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title | Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title_full | Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title_fullStr | Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title_full_unstemmed | Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title_short | Improving carrier mobility in two-dimensional semiconductors with rippled materials |
| title_sort | improving carrier mobility in two dimensional semiconductors with rippled materials |
| topic | Engineering::Materials::Microelectronics and semiconductor materials Carrier Mobility Field Effect Transistors |
| url | https://hdl.handle.net/10356/164465 |
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