Improving carrier mobility in two-dimensional semiconductors with rippled materials

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–...

书目详细资料
Main Authors:	Ng, Hong Kuan, Du, Xiang, Suwardi, Ady, Hu, Guangwei, Ke, Yang, Zhao, Yunshan, Liu, Tao, Cao, Zhonghan, Liu, Huajun, Li, Shisheng, Cao, Jing, Zhu, Qiang, Dong, Zhaogang, Tan, Ivan Chee Kiang, Chi, Dongzhi, Qiu, Cheng-Wei, Hippalgaonkar, Kedar, Eda, Goki, Yang, Ming, Wu, Jing
其他作者:	School of Materials Science and Engineering
格式:	Journal Article
语言:	English
出版:	2023
主题:	Engineering::Materials::Microelectronics and semiconductor materials Carrier Mobility Field Effect Transistors
在线阅读:	https://hdl.handle.net/10356/164465

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