Al₂O₃/HfO₂ nanolaminate dielectric boosting IGZO-based flexible thin-film transistors

Al₂O₃/HfO₂ nanolaminate dielectric boosting IGZO-based flexible thin-film transistors

Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a sta...

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Bibliographic Details
Main Authors: Shi, Qiuwei, Aziz, Izzat, Ciou, Jin-Hao, Wang, Jiangxin, Gao, Dace, Xiong, Jiaqing, Lee, Pooi See
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Materials
Nanolaminate Dielectric
Thin-Film Transistors
Online Access:https://hdl.handle.net/10356/164674

Internet

https://hdl.handle.net/10356/164674

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