Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen
Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) expo...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/165129 |
| _version_ | 1826111986407047168 |
|---|---|
| author | Huang, Shiyong Ng, Zhi Kai Li, Hongling Chaturvedi, Apoorva Lim, Mark Jian Wei Tay, Roland Yingjie Teo, Edwin Hang Tong Xu, Shuyan Ostrikov, Kostya Ken Tsang, Siu Hon |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Huang, Shiyong Ng, Zhi Kai Li, Hongling Chaturvedi, Apoorva Lim, Mark Jian Wei Tay, Roland Yingjie Teo, Edwin Hang Tong Xu, Shuyan Ostrikov, Kostya Ken Tsang, Siu Hon |
| author_sort | Huang, Shiyong |
| collection | NTU |
| description | Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices. |
| first_indexed | 2024-10-01T02:59:29Z |
| format | Journal Article |
| id | ntu-10356/165129 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:59:29Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1651292023-03-16T15:31:49Z Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen Huang, Shiyong Ng, Zhi Kai Li, Hongling Chaturvedi, Apoorva Lim, Mark Jian Wei Tay, Roland Yingjie Teo, Edwin Hang Tong Xu, Shuyan Ostrikov, Kostya Ken Tsang, Siu Hon School of Electrical and Electronic Engineering School of Materials Science and Engineering National Institute of Education Temasek Laboratories @ NTU Plasma Sources and Applications Center Engineering::Materials Inductively Coupled Plasmas Chemical Vapor Deposition Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O2/Ar/H2 plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices. Published version 2023-03-14T05:50:11Z 2023-03-14T05:50:11Z 2022 Journal Article Huang, S., Ng, Z. K., Li, H., Chaturvedi, A., Lim, M. J. W., Tay, R. Y., Teo, E. H. T., Xu, S., Ostrikov, K. K. & Tsang, S. H. (2022). Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen. Nanomaterials, 12(21), 12213876-. https://dx.doi.org/10.3390/nano12213876 2079-4991 https://hdl.handle.net/10356/165129 10.3390/nano12213876 36364652 2-s2.0-85141866580 21 12 12213876 en Nanomaterials © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). application/pdf |
| spellingShingle | Engineering::Materials Inductively Coupled Plasmas Chemical Vapor Deposition Huang, Shiyong Ng, Zhi Kai Li, Hongling Chaturvedi, Apoorva Lim, Mark Jian Wei Tay, Roland Yingjie Teo, Edwin Hang Tong Xu, Shuyan Ostrikov, Kostya Ken Tsang, Siu Hon Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title | Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title_full | Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title_fullStr | Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title_full_unstemmed | Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title_short | Stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets exposed to high-energy ions and reactive atomic oxygen |
| title_sort | stability of wafer scale thin films of vertically aligned hexagonal bn nanosheets exposed to high energy ions and reactive atomic oxygen |
| topic | Engineering::Materials Inductively Coupled Plasmas Chemical Vapor Deposition |
| url | https://hdl.handle.net/10356/165129 |
| work_keys_str_mv | AT huangshiyong stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT ngzhikai stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT lihongling stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT chaturvediapoorva stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT limmarkjianwei stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT tayrolandyingjie stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT teoedwinhangtong stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT xushuyan stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT ostrikovkostyaken stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen AT tsangsiuhon stabilityofwaferscalethinfilmsofverticallyalignedhexagonalbnnanosheetsexposedtohighenergyionsandreactiveatomicoxygen |