Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
Antireflective (AR) surface texturing is a feasible way to boost the light absorption of photosensitive materials and devices. As a plasma-free etching method, metal-assisted chemical etching (MacEtch) has been employed for fabricating GaN AR surface texturing. However, the poor etching efficiency o...
| Hauptverfasser: | , , , , |
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| Format: | Journal Article |
| Sprache: | English |
| Veröffentlicht: |
2023
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| Online Zugang: | https://hdl.handle.net/10356/165824 |