Ge-on-Si avalanche photodiodes with photon trapping nanostructures for sensing and optical quantum applications

Ge-on-Si avalanche photodiodes with photon trapping nanostructures for sensing and optical quantum applications

High-sensitivity Ge/Si avalanche photodiodes (APDs) have recently gained attention for their application in sensing and optical communication due to their low cost and CMOS compatible process. However, compared to commercial III–V compound APDs, Ge/Si APDs usually suffer from the issue of relatively...

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Bibliographic Details
Main Authors: Wu, Shaoteng, Zhou, Hao, He, Li, Wang, Zhaozhen, Chen, Qimiao, Zhang, Lin, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Germanium
Avalanche Photodiode
Silicon Photonics
Photon Trapping
Online Access:https://hdl.handle.net/10356/166601

Internet

https://hdl.handle.net/10356/166601

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