Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)
This study investigates the failure mechanisms of Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) under high electric field through reverse bias stress condition. The report presents a detailed literature review of the basic theoretical backgrounds and known failure mechanisms...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167112 |