Electrical characterization of GaN-based Schottky diodes
Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1mm and 1.3mm have been made by physical vapour deposition of (Electron-Beam) metal contacts onto a gallium nitride on sapphire (Al2O3) and gallium nitride on silicon wafers. A graphical user interface based on...
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| Formaat: | Final Year Project (FYP) |
| Taal: | English |
| Gepubliceerd in: |
2009
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| Online toegang: | http://hdl.handle.net/10356/16749 |