Degradation study of GaN-based high electron mobility transistors
"Moore's Law" states that the number of transistors in an integrated circuit will increase twice roughly every two years. As observed since the 1970s, the number of transistors per silicon integrated circuit doubled every 18 months, consistent with this trend. This increase in transis...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167553 |