Resistive memory, Pt/MoS2/GeS/Ag

In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism...

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Bibliographic Details
Main Author: Pang, Yong Liang
Other Authors: Ang Diing Shenp
Format: Final Year Project (FYP)
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167613