Resistive memory, Pt/MoS2/GeS/Ag
In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167613 |
| _version_ | 1826130243216211968 |
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| author | Pang, Yong Liang |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Pang, Yong Liang |
| author_sort | Pang, Yong Liang |
| collection | NTU |
| description | In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism, endurance, retention and uniformity. Understanding the device Pt/MoS2/GeS/Ag the characteristic show low operation voltage of below 1V. The promising aspect of RRAM and outlook. Finally Reflection. |
| first_indexed | 2024-10-01T07:53:38Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/167613 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:53:38Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1676132023-07-07T17:45:44Z Resistive memory, Pt/MoS2/GeS/Ag Pang, Yong Liang Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism, endurance, retention and uniformity. Understanding the device Pt/MoS2/GeS/Ag the characteristic show low operation voltage of below 1V. The promising aspect of RRAM and outlook. Finally Reflection. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-05-31T04:22:43Z 2023-05-31T04:22:43Z 2023 Final Year Project (FYP) Pang, Y. L. (2023). Resistive memory, Pt/MoS2/GeS/Ag. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167613 https://hdl.handle.net/10356/167613 en A2078-221 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Pang, Yong Liang Resistive memory, Pt/MoS2/GeS/Ag |
| title | Resistive memory, Pt/MoS2/GeS/Ag |
| title_full | Resistive memory, Pt/MoS2/GeS/Ag |
| title_fullStr | Resistive memory, Pt/MoS2/GeS/Ag |
| title_full_unstemmed | Resistive memory, Pt/MoS2/GeS/Ag |
| title_short | Resistive memory, Pt/MoS2/GeS/Ag |
| title_sort | resistive memory pt mos2 ges ag |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/167613 |
| work_keys_str_mv | AT pangyongliang resistivememoryptmos2gesag |