GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A double stacked monochalcogenide GeS-based conducting-bridge random access memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved resistive memory characteristics. The IGZO/GeS double layer is found to provide the CBRAM with a markedly improved sub-1V DC set/reset-voltag...

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Bibliographic Details
Main Authors: Ali, Asif, Abbas, Haider, Li, Jiayi, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Double Layers
Ion Migration
Online Access:https://hdl.handle.net/10356/169146

Internet

https://hdl.handle.net/10356/169146

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