Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors

Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors

(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciti...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Moutanabbir, Oussama, Assali, Simone, Gong, Xiao, O'Reilly, Eoin, Broderick, Chris A., Marzban, Bahareh, Witzens, Jeremy, Du, Wei, Yu, Shui-Qing, Chelnokov, Alexei, Buca, Dan, Nam, Donguk
Awduron Eraill: School of Electrical and Electronic Engineering
Fformat: Journal Article
Iaith:English
Cyhoeddwyd: 2023
Pynciau:
Engineering::Materials::Photonics and optoelectronics materials
Chemical Sensors
Heterojunctions
Mynediad Ar-lein:https://hdl.handle.net/10356/169766

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https://hdl.handle.net/10356/169766

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