Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors

Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors

(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciti...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Moutanabbir, Oussama, Assali, Simone, Gong, Xiao, O'Reilly, Eoin, Broderick, Chris A., Marzban, Bahareh, Witzens, Jeremy, Du, Wei, Yu, Shui-Qing, Chelnokov, Alexei, Buca, Dan, Nam, Donguk
Muut tekijät: School of Electrical and Electronic Engineering
Aineistotyyppi: Journal Article
Kieli:English
Julkaistu: 2023
Aiheet:
Engineering::Materials::Photonics and optoelectronics materials
Chemical Sensors
Heterojunctions
Linkit:https://hdl.handle.net/10356/169766

Internet

https://hdl.handle.net/10356/169766

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