Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
The surface morphology evolution of N-polar GaN with growth time was investigated and compared with Ga-polar GaN. N-polar GaN directly grown on SiC substrates was found to have slower 3D-to-2D growth transformation and less coalescence than the Ga-polar counterpart, resulting in rougher surface morp...
| मुख्य लेखकों: | , , , , |
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| अन्य लेखक: | |
| स्वरूप: | Journal Article |
| भाषा: | English |
| प्रकाशित: |
2023
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| विषय: | |
| ऑनलाइन पहुंच: | https://hdl.handle.net/10356/169937 |