Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

The surface morphology evolution of N-polar GaN with growth time was investigated and compared with Ga-polar GaN. N-polar GaN directly grown on SiC substrates was found to have slower 3D-to-2D growth transformation and less coalescence than the Ga-polar counterpart, resulting in rougher surface morp...

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Bibliographic Details
Main Authors: Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
N-polar GaN
Surface Morphology Evolution
Online Access:https://hdl.handle.net/10356/169937

Internet

https://hdl.handle.net/10356/169937

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